VLSI

Learn VLSI the exam way—clear concepts, worked examples, and 87 focused lessons in electronics engineering.

Instructor: DAKALA SREENIVASULU

Last updated Aug 2026 en

25 learners enrolled

all-levels

This course includes

— on-demand video
Access on mobile & desktop
Full lifetime access
Certificate of completion

Course content

9 sections · 87 lectures

Lec 01: Introduction to VLSI and VLSI design flow Preview
Lec 02: Moore's law and IC evolution
Lec 03: MOS transistor structure and modes of operation
Lec 04: Characteristics of enhancement mode NMOS transistor

Lec 05: Steps for MOS transistor fabrication Preview
Lec 06: NMOS fabrication steps
Lec 07: PMOS fabrication steps
Lec 08: CMOS N-Well fabrication
Lec 09: CMOS P-Well fabrication
Lec 10: Twin-tub process

Lec 11: Ids versus Vds derivation_Part1 Preview
Lec 12: Ids versus Vds derivation_Part2
Lec 13: Aspects of MOS transistor threshold voltage
Lec 14: Transconductance and output conductance
Lec 15: Figure of merit and pass transistor

Lec 16: nMOS inverter Preview
Lec 17: Alternate forms of pull ups
Lec 18: CMOS inverter
Lec 19: Pull up to pull down ratio of nmos inverter driven by another nmos inverter
Lec 20: Pull up to pull down ratio for nmos inverter driven through one or more pass transistors
Lec 21: Bicmos inverter
Lec 22: Difference between CMOS and Bipolar technologies
Lec 23: Latch up in CMOS circuits

Lec 24: MOS layers for stick diagrams Preview
Lec 25: CMOS circuit realizations
Lec 26: Rules to draw the Stick diagrams
Lec 27: Stick diagram of CMOS inverter
Lec 28: Stick diagram of CMOS NAND GATE
Lec 29: Stick diagram of CMOS NOR GATE
Lec 30: Stick diagram of CMOS logic functions
Lec 31: MOS Layout layers
Lec 32: Lambda based design rules for Mask layout
Lec 33: Layout diagram for CMOS inverter
Lec 34: Layout diagram for CMOS 2-input NAND and NOR gates
Lec 35: Layout diagram for CMOS logic functions

Lec 36: Sheet resistance concept Preview
Lec 37: Sheet Resistance concept applied to MOS transistors and Inverters
Lec 38: Sheet Resistance concept applied to CMOS Inverter
Lec 39: Area capacitance and Standard unit of capacitance
Lec 40: Some area capacitance calculations
Lec 41: Delay time
Lec 42: Inverter delays
Lec 43: A More Formal Estimation of CMOS Inverter Delay
Lec 44: Propagation delay
Lec 45: Wiring capacitances
Lec 46: Choice of layers
Lec 47: Scaling models and scaling factors
Lec 48: Scaling models and scaling factors
Lec 49: Limitations on scaling_Part1
Lec 50: Limitations on scaling_Part2
Lec 52: Limits on logic levels and current density
Lec 53: Switch logic
Lec 54: Gate logic
Lec 55: Pseudo nMOS logic
Lec 56: Dynamic CMOS logic
Lec 57: Clocked CMOS logic
Lec 58: Driving large capacitance_Part1
Lec 59: Driving large capacitance_Part2
Lec 60: Driving large capacitance_Part3

Lec 61: Regions of operations of MOS transistors Preview
Lec 62: Common source stage with resistive load
Lec 63: Common source stage with diode connected load
Lec 64: Common source amplifer analysis without source resistor
Lec 65: Common source amplifer analysis with source resistor
Lec 66: Common drain amplifier
Lec 67: Common gate amplifer
Lec 68: MOS device models_Part1
Lec 69: MOS device models_Part2
Lec 70: Body bias effect in MOS transistor
Lec 71: Current sources and sinks_Part1
Lec 72: Current sources and sinks_Part2
Lec 73: Current sources and sinks_Part3

Lec 74: FPGA design flow Preview
Lec 75: Basic architecture of FPGA_Part1
Lec 76: Basic architecture of FPGA_Part2
Lec 77: FPGA technologies_SRAM technology
Lec 78: FPGA technologies_Antifuse technology
Lec 79: EPROM OR EEPROM technology in FPGA
Lec 80: FPGA families_Part1
Lec 81: FPGA families_part-2
Lec 82: FPGA families_part-3

Lec 83: Giga scale dilemma Preview
Lec 84: Short channel effects_Part1
Lec 85: Short channel effects_Part2
Lec 86: High-K dielectric
Lec 87: FinFET technology_Part1
Lec 88: FinFET technology_Part2

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Description

VLSI is an exam-focused electronics engineering programme designed for ECE / EEE learners building circuit and digital fundamentals for exams (all levels). Lessons are paced for semester revision and competitive practice, with clear explanations you can replay anytime.

You will build device and system intuition for VLSI, linking theory to typical university numericals and design questions. Syllabus highlights include Introduction to VLSI, Fabrication of MOS transistors, Ids vs Vds & other parameters, Inverters & Pull up to pull down ratios, Stick and layout diagrams, and Basic circuit concepts. Across 87 lessons, you will move from foundations to problem-solving patterns that show up in university papers and placement tests.

Taught by DAKALA SREENIVASULU, this course keeps theory short and practice heavy—so you can revise faster, spot examiner cues, and build confidence before mocks and finals.